Request Quote













Request Quote


2SA2016-TD-E | ON SEMICONDUCTOR

ON SEMICONDUCTOR 2SA2016-TD-E

Small SignalBipolarTransistor,0.1AI(C),50VV(BR)CEO, 1-Element,NPN,Silicon,TO-236AB


Ordering Info

In Stock: 38000 Delivery

MOQ: 1000

Package Quantity: 1000

HTS Code: 8541.29.00

ECCN: EAR99

COO: CN

Subject to tariff fees.

*Product Country of Origin (COO) information may be unavailable at the time of order placement. Buyer acknowledges that additional duties, tariffs, or import fees may be assessed based on the actual COO once determined.

Quantity Cost
1000-37999 $0.40
38000+ $0.3692


Secure Payment Methods: Accepted Payment Methods:  Visa, Mastercard, American Express, Discovery Card PayPal accepted
Need more Info?

Electrical Characteristics

Case Connection COLLECTOR
Collector Current-Max (IC) 7
Collector-emitter Voltage-Max 50
Configuration SINGLE
DC Current Gain-Min (hFE) 200
JEDEC-95 Code TO-243AA
JESD-30 Code R-PSSO-F3
JESD-609 Code e6
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 3
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type PNP
Surface Mount YES
Terminal Finish Tin/Bismuth (Sn/Bi)
Terminal Form FLAT
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application SWITCHING
Transistor Element Material SILICON
Transition Frequency-Nom (fT) 290