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2SA2016-TD-E | ON SEMICONDUCTOR

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ON SEMICONDUCTOR 2SA2016-TD-E

Small SignalBipolarTransistor,0.1AI(C),50VV(BR)CEO, 1-Element,NPN,Silicon,TO-236AB


Ordering Info

In Stock: 4000 Delivery

MOQ: 1000

Package Quantity: 1000

HTS Code: 8541.29.00

ECCN: EAR99

COO: CN

Subject to tariff fees.

Quantity Cost
1000-3999 $0.3429
4000+ $0.32


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Electrical Characteristics

Case Connection COLLECTOR
Collector Current-Max (IC) 7
Collector-emitter Voltage-Max 50
Configuration SINGLE
DC Current Gain-Min (hFE) 200
JEDEC-95 Code TO-243AA
JESD-30 Code R-PSSO-F3
JESD-609 Code e6
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 3
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type PNP
Surface Mount YES
Terminal Finish Tin/Bismuth (Sn/Bi)
Terminal Form FLAT
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application SWITCHING
Transistor Element Material SILICON
Transition Frequency-Nom (fT) 290