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ROHM SEMICONDUCTOR 2SK3065T100

Single N-Channel 500 mW 60 V 0.45 Ohm Surface Mount MosFet - SC-62

In Stock: 0

MOQ: 1000

Package Quantity: 1000

HTS Code: 8541.21.00

ECCN: EAR99

COO: KR

Quantity	Cost
1000	-


Case Connection	DRAIN
Configuration	SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min	60
Drain Current-Max (Abs) (ID)	2
Drain Current-Max (ID)	2
Drain-source On Resistance-Max	0.45
FET Technology	METAL-OXIDE SEMICONDUCTOR
JESD-30 Code	R-PSSO-F3
Moisture Sensitivity Level	1
Number of Elements	1
Number of Terminals	3
Operating Mode	ENHANCEMENT MODE
Operating Temperature-Max	150
Package Body Material	PLASTIC/EPOXY
Package Shape	RECTANGULAR
Package Style	SMALL OUTLINE
Peak Reflow Temperature (Cel)	260
Polarity/Channel Type	N-CHANNEL
Power Dissipation-Max (Abs)	2
Qualification Status	Not Qualified
Sub Category	FET General Purpose Power
Surface Mount	YES
Terminal Form	FLAT
Terminal Position	SINGLE
Time@Peak Reflow Temperature-Max (s)	10
Transistor Application	SWITCHING
Transistor Element Material	SILICON