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55GN01CA-TB-E | ON SEMICONDUCTOR

ON SEMICONDUCTOR 55GN01CA-TB-E

55GN01CA Series NPN 10 V 200 mW 70 mA UHF Wide-Band Low Noise Amplifier - CP-3


Ordering Info

In Stock: 0

MOQ: 3000

Package Quantity: 3000

HTS Code: 8541.21.00

ECCN: EAR99

COO: CN

Subject to tariff fees.

*Product Country of Origin (COO) information may be unavailable at the time of order placement. Buyer acknowledges that additional duties, tariffs, or import fees may be assessed based on the actual COO once determined.

Quantity Cost
3000 -

Electrical Characteristics

Collector Current-Max (IC) .07
Collector-base Capacitance-Max 1.3
Collector-emitter Voltage-Max 10
Configuration SINGLE
DC Current Gain-Min (hFE) 100
Highest Frequency Band C BAND
JEDEC-95 Code TO-236AB
JESD-30 Code R-PDSO-G3
JESD-609 Code e6
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 3
Operating Temperature-Max 150
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Polarity/Channel Type NPN
Power Dissipation-Max (Abs) .2
Sub Category Other Transistors
Surface Mount YES
Terminal Finish Tin/Bismuth (Sn/Bi)
Terminal Form GULL WING
Terminal Position DUAL
Transistor Application AMPLIFIER
Transistor Element Material SILICON
Transition Frequency-Nom (fT) 5500