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AFT09MS007NT1 | NXP

NXP AFT09MS007NT1

AFT09MSx Series 30 V 870 MHz N-Channel RF Power LDMOS Transistor - PLD-1.5W-2


Ordering Info

In Stock: 0

Package Quantity: 1000

HTS Code: 8542.33.00

ECCN: EAR99

COO: CN

Subject to tariff fees.

*Product Country of Origin (COO) information may be unavailable at the time of order placement. Buyer acknowledges that additional duties, tariffs, or import fees may be assessed based on the actual COO once determined.

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Electrical Characteristics

Configuration Single
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-609 Code e3
Moisture Sensitivity Level 3
Operating Temperature-Max 150
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 182
Sub Category FET General Purpose Power
Surface Mount YES
Terminal Finish MATTE TIN
Time@Peak Reflow Temperature-Max (s) 40