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AFT09MS007NT1 | NXP

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NXP AFT09MS007NT1

AFT09MSx Series 30 V 870 MHz N-Channel RF Power LDMOS Transistor - PLD-1.5W-2


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In Stock: 0

Package Quantity: 1000

COO: CN

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Electrical Characteristics

Configuration Single
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-609 Code e3
Moisture Sensitivity Level 3
Operating Temperature-Max 150
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 182
Sub Category FET General Purpose Power
Surface Mount YES
Terminal Finish MATTE TIN
Time@Peak Reflow Temperature-Max (s) 40