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BA891,115 | NXP

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NXP BA891,115

SOD523/BANDSW DIODE / 12NC: 934055282115


Ordering Info

In Stock: 0

Package Quantity: 3000

COO: CN

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Electrical Characteristics

Configuration SINGLE
Diode Capacitance-Max 1.05
Diode Element Material SILICON
Diode Type MIXER DIODE
Forward Voltage-Max (VF) 1
Frequency Band VERY HIGH FREQUENCY
JESD-30 Code R-PDSO-F2
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 2
Operating Temperature-Max 150
Operating Temperature-Min -65
Output Current-Max 0.1
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Power Dissipation-Max 0.715
Qualification Status Not Qualified
Rep Pk Reverse Voltage-Max 35
Sub Category Rectifier Diodes
Surface Mount YES
Technology PLANAR DOPED BARRIER
Terminal Finish Tin (Sn)
Terminal Form FLAT
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) 40