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BAP70-03,115 | NXP SEMICONDUCTOR

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NXP SEMICONDUCTOR BAP70-03,115


Ordering Info

In Stock: 0

MOQ: 3000

Package Quantity: 3000

HTS Code: 0

COO: CN

Subject to tariff fees.

Quantity Cost
3000 -

Electrical Characteristics

Additional Feature HIGH VOLTAGE
Application ATTENUATOR
Breakdown Voltage-Min 50
Configuration SINGLE
Diode Capacitance-Max 0.25
Diode Capacitance-Nom 0.57
Diode Element Material SILICON
Diode Forward Resistance-Max 1.9
Diode Res Test Current 0.5
Diode Res Test Frequency 100
Diode Type PIN DIODE
JESD-30 Code R-PDSO-G2
JESD-609 Code e3
Minority Carrier Lifetime-Nom 1.25
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 2
Operating Temperature-Max 150
Operating Temperature-Min -65
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Power Dissipation-Max 0.5
Qualification Status Not Qualified
Reverse Test Voltage 0
Sub Category PIN Diodes
Surface Mount YES
Technology POSITIVE-INTRINSIC-NEGATIVE
Terminal Finish Tin (Sn)
Terminal Form GULL WING
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) 40