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BAP70-04W,115 | NXP SEMICONDUCTOR

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NXP SEMICONDUCTOR BAP70-04W,115

Pin Diode, 50V V(BR), Silicon


Ordering Info

In Stock: 0

MOQ: 3000

Package Quantity: 3000

Quantity Cost
3000 -

Electrical Characteristics

Application ATTENUATOR; SWITCHING
Breakdown Voltage-Min 50
Configuration SERIES CONNECTED, CENTER TAP, 2 ELEMENTS
Diode Capacitance-Max 0.3
Diode Capacitance-Nom 0.6
Diode Element Material SILICON
Diode Forward Resistance-Max 1.9
Diode Res Test Current 0.5
Diode Res Test Frequency 100
Diode Type PIN DIODE
JESD-30 Code R-PDSO-G3
JESD-609 Code e3
Minority Carrier Lifetime-Nom 1.25
Moisture Sensitivity Level 1
Number of Elements 2
Number of Terminals 3
Operating Temperature-Max 150
Operating Temperature-Min -65
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Power Dissipation-Max 0.26
Qualification Status Not Qualified
Reverse Test Voltage 0
Sub Category PIN Diodes
Surface Mount YES
Technology POSITIVE-INTRINSIC-NEGATIVE
Terminal Finish Tin (Sn)
Terminal Form GULL WING
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) 40