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BAS16P2T5G | ON SEMICONDUCTOR

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ON SEMICONDUCTOR BAS16P2T5G


Ordering Info

In Stock: 0

MOQ: 8000

Package Quantity: 8000

ECCN: N.E.

COO: CN

Subject to tariff fees.

Quantity Cost
8000 -

Electrical Characteristics

Configuration SINGLE
Diode Element Material SILICON
Diode Type RECTIFIER DIODE
Forward Voltage-Max (VF) 0.715
JESD-30 Code R-PDSO-F2
JESD-609 Code e3
Moisture Sensitivity Level 1
Non-rep Pk Forward Current-Max 0.5
Number of Elements 1
Number of Terminals 2
Operating Temperature-Max 150
Operating Temperature-Min -55
Output Current-Max 0.2
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Power Dissipation-Max 0.24
Rep Pk Reverse Voltage-Max 100
Reverse Recovery Time-Max 0.006
Sub Category Rectifier Diodes
Surface Mount YES
Terminal Finish Tin (Sn)
Terminal Form FLAT
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) 40