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BAS40-04LT1G | ON SEMICONDUCTOR

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ON SEMICONDUCTOR BAS40-04LT1G

BAS40-04LT1G Series 40 V 600 mA Dual Schottky Barrier Diode - SOT-23-3


RoHS Compliant

Ordering Info

In Stock: 0

MOQ: 36000

Package Quantity: 3000

Quantity Cost
36000 -

Electrical Characteristics

Additional Feature FAST SWITCHING
Configuration SERIES CONNECTED, CENTER TAP, 2 ELEMENTS
Diode Element Material SILICON
Diode Type RECTIFIER DIODE
Forward Voltage-Max (VF) 0.38
JEDEC-95 Code TO-236AB
JESD-30 Code R-PDSO-G3
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 2
Number of Terminals 3
Operating Temperature-Max 150
Operating Temperature-Min -55
Output Current-Max 0.12
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Power Dissipation-Max 0.225
Qualification Status Not Qualified
Rep Pk Reverse Voltage-Max 40
Sub Category Rectifier Diodes
Surface Mount YES
Technology SCHOTTKY
Terminal Finish Tin (Sn)
Terminal Form GULL WING
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) 40