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BAV70LT3G | ON SEMICONDUCTOR

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ON SEMICONDUCTOR BAV70LT3G

Rectifier Diode, 2 Element, 0.1A,100VV(RRM),Silicon, TO-236AB


Ordering Info

In Stock: 0

MOQ: 1

Package Quantity: 1

Quantity Cost
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Electrical Characteristics

Configuration COMMON CATHODE, 2 ELEMENTS
Diode Element Material SILICON
Diode Type RECTIFIER DIODE
Forward Voltage-Max (VF) 1.3
JEDEC-95 Code TO-236AB
JESD-30 Code R-PDSO-G3
JESD-609 Code e3
Moisture Sensitivity Level 1
Non-rep Pk Forward Current-Max 0.5
Number of Elements 2
Number of Terminals 3
Operating Temperature-Max 150
Operating Temperature-Min -55
Output Current-Max 0.1
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Power Dissipation-Max 0.225
Qualification Status Not Qualified
Rep Pk Reverse Voltage-Max 100
Reverse Recovery Time-Max 0.006
Sub Category Rectifier Diodes
Surface Mount YES
Terminal Finish Tin (Sn)
Terminal Form GULL WING
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) 40