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BC847CDW1T1G | ON SEMICONDUCTOR

ON SEMICONDUCTOR BC847CDW1T1G

BC Series 45 V 100 mA SMT NPN Silicon Dual General Purpose Transistor - SOT-363


Ordering Info

In Stock: 2571000 Delivery

MOQ: 6000

Package Quantity: 3000

HTS Code: 8541.21.00

ECCN: EAR99

COO: CN

Subject to tariff fees.

*Product Country of Origin (COO) information may be unavailable at the time of order placement. Buyer acknowledges that additional duties, tariffs, or import fees may be assessed based on the actual COO once determined.

Quantity Cost
6000-2564999 $0.033
2565000+ $0.0305


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Electrical Characteristics

Collector Current-Max (IC) 0.1
Collector-emitter Voltage-Max 45
Configuration SEPARATE, 2 ELEMENTS
DC Current Gain-Min (hFE) 420
JESD-30 Code R-PDSO-G6
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 2
Number of Terminals 6
Operating Temperature-Max 150
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type NPN
Power Dissipation-Max (Abs) 0.38
Qualification Status Not Qualified
Sub Category Other Transistors
Surface Mount YES
Terminal Finish Tin (Sn)
Terminal Form GULL WING
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) 40
Transistor Application AMPLIFIER
Transistor Element Material SILICON
Transition Frequency-Nom (fT) 100