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BC856BW | NXP

NXP BC856BW

Small Signal Bipolar Transistor, 0.1AI(C),65VV(BR)CEO, 1-Element, PNP, Silicon


Ordering Info

In Stock: 7000

MOQ: 1

Package Quantity: 1

*Product Country of Origin (COO) information may be unavailable at the time of order placement. Buyer acknowledges that additional duties, tariffs, or import fees may be assessed based on the actual COO once determined.

Quantity Cost
1 -

Electrical Characteristics

Collector Current-Max (IC) 0.1
Collector-emitter Voltage-Max 65
Configuration SINGLE
DC Current Gain-Min (hFE) 220
JESD-30 Code R-PDSO-G3
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 3
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type PNP
Surface Mount YES
Terminal Finish Tin (Sn)
Terminal Form GULL WING
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING
Transistor Element Material SILICON
Transition Frequency-Nom (fT) 100