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BC859CW,115 | NEXPERIA

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NEXPERIA BC859CW,115

SmallSignalBipolarTransistor,0.1AI(C),30VV(BR)CEO,1-Element,PNP,Silicon


Ordering Info

In Stock: 51000 Delivery

MOQ: 9000

Package Quantity: 3000

HTS Code: 8541.21.00

ECCN: EAR99

COO: MY

Quantity Cost
9000-50999 $0.018
51000+ $0.0168


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Electrical Characteristics

Additional Feature LOW NOISE
Collector Current-Max (IC) .1
Collector-base Capacitance-Max 5
Collector-emitter Voltage-Max 30
Configuration SINGLE
DC Current Gain-Min (hFE) 420
JESD-30 Code R-PDSO-G3
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 3
Operating Temperature-Max 150
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type PNP
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish Tin (Sn)
Terminal Form GULL WING
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) 40
Transistor Application AMPLIFIER
Transistor Element Material SILICON
Transition Frequency-Nom (fT) 100
VCEsat-Max .65