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BC859CW,115 | NEXPERIA

NEXPERIA BC859CW,115

SmallSignalBipolarTransistor,0.1AI(C),30VV(BR)CEO,1-Element,PNP,Silicon


Ordering Info

In Stock: 0

MOQ: 9000

Package Quantity: 3000

HTS Code: 8541.21.0075

ECCN: EAR99

COO: MY

*Product Country of Origin (COO) information may be unavailable at the time of order placement. Buyer acknowledges that additional duties, tariffs, or import fees may be assessed based on the actual COO once determined.

Quantity Cost
9000 -

Electrical Characteristics

Additional Feature LOW NOISE
Collector Current-Max (IC) .1
Collector-base Capacitance-Max 5
Collector-emitter Voltage-Max 30
Configuration SINGLE
DC Current Gain-Min (hFE) 420
JESD-30 Code R-PDSO-G3
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 3
Operating Temperature-Max 150
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type PNP
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish Tin (Sn)
Terminal Form GULL WING
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) 40
Transistor Application AMPLIFIER
Transistor Element Material SILICON
Transition Frequency-Nom (fT) 100
VCEsat-Max .65