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BCM61B,215 | NXP

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NXP BCM61B,215

Small Signal Bipolar Transistor, 0.1A I(C),45VV(BR)CEO, 1-Element, NPN, Silicon


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MOQ: 1

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Electrical Characteristics

Case Connection COLLECTOR
Collector Current-Max (IC) 0.1
Collector-emitter Voltage-Max 45
Configuration CURRENT MIRROR
DC Current Gain-Min (hFE) 200
JESD-30 Code R-PDSO-G4
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 4
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Polarity/Channel Type NPN
Surface Mount YES
Terminal Finish Tin (Sn)
Terminal Form GULL WING
Terminal Position DUAL
Transistor Application AMPLIFIER
Transistor Element Material SILICON
Transition Frequency-Nom (fT) 250