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BCM847BV,115 | NXP

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NXP BCM847BV,115

Small Signal Bipolar Transistor, 0.1A I(C),45VV(BR)CEO, 2-Element, NPN, Silicon


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MOQ: 1

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Electrical Characteristics

Case Connection ISOLATED
Collector Current-Max (IC) 0.1
Collector-emitter Voltage-Max 45
Configuration SEPARATE, 2 ELEMENTS
DC Current Gain-Min (hFE) 200
JESD-30 Code R-PDSO-F6
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 2
Number of Terminals 6
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type NPN
Surface Mount YES
Terminal Finish Tin (Sn)
Terminal Form FLAT
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application AMPLIFIER
Transistor Element Material SILICON
Transition Frequency-Nom (fT) 250