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BCP52,135 | NXP

NXP BCP52,135

Small Signal Bipolar Transistor, 1A I(C),60VV(BR)CEO, 1-Element, PNP, Silicon


RoHS Compliant

Ordering Info

In Stock: 0

MOQ: 4000

Package Quantity: 4000

*Product Country of Origin (COO) information may be unavailable at the time of order placement. Buyer acknowledges that additional duties, tariffs, or import fees may be assessed based on the actual COO once determined.

Quantity Cost
4000 -

Electrical Characteristics

Case Connection COLLECTOR
Collector Current-Max (IC) 1
Collector-emitter Voltage-Max 60
Configuration SINGLE
DC Current Gain-Min (hFE) 40
JESD-30 Code R-PDSO-G4
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 4
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type PNP
Reference Standard AEC-Q101; IEC-60134
Surface Mount YES
Terminal Finish TIN
Terminal Form GULL WING
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING
Transistor Element Material SILICON
Transition Frequency-Nom (fT) 145