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BD681G | ON SEMICONDUCTOR

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ON SEMICONDUCTOR BD681G

TO225-3/BIPOLAR POWER C77 NPN 4A 100V


Ordering Info

In Stock: 0

MOQ: 500

Package Quantity: 500

HTS Code: 8541.29.0095

ECCN: EAR99

COO: CN

Subject to tariff fees.

Quantity Cost
500 -

Electrical Characteristics

Collector Current-Max (IC) 4
Collector-emitter Voltage-Max 100
Configuration DARLINGTON WITH BUILT-IN DIODE AND RESISTOR
DC Current Gain-Min (hFE) 750
JEDEC-95 Code TO-225AA
JESD-30 Code R-PSFM-T3
JESD-609 Code e3
Number of Elements 1
Number of Terminals 3
Operating Temperature-Max 150
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type NPN
Power Dissipation-Max (Abs) 40
Qualification Status Not Qualified
Sub Category Other Transistors
Surface Mount NO
Terminal Finish Tin (Sn)
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) 40
Transistor Application AMPLIFIER
Transistor Element Material SILICON