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BDX34C | ST MICROELECTRONICS

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ST MICROELECTRONICS BDX34C

Power Bipolar Transistor, 4A I(C),60VV(BR)CEO,1-Element, PNP, Silicon,TO-126,Plastic/Epoxy, 3Pin


RoHS Compliant

Ordering Info

In Stock: 0

MOQ: 50

Package Quantity: 50

Quantity Cost
50 -

Electrical Characteristics

Collector Current-Max (IC) 10
Collector-emitter Voltage-Max 100
Configuration DARLINGTON WITH BUILT-IN DIODE AND RESISTOR
DC Current Gain-Min (hFE) 750
JEDEC-95 Code TO-220AB
JESD-30 Code R-PSFM-T3
JESD-609 Code e3
Moisture Sensitivity Level NOT APPLICABLE
Number of Elements 1
Number of Terminals 3
Operating Temperature-Max 150
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type PNP
Power Dissipation Ambient-Max 70
Power Dissipation-Max (Abs) 70
Qualification Status Not Qualified
Sub Category Other Transistors
Surface Mount NO
Terminal Finish Matte Tin (Sn)
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application SWITCHING
Transistor Element Material SILICON
Transition Frequency-Nom (fT) 3
VCEsat-Max 2.5