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BF822,215 | NEXPERIA

NEXPERIA BF822,215

RF SmallSignalField-EffectTransistor,1-Element,VeryHighFrequency Band,Silicon,N-Channel,JunctionFET,TO-236AB


Ordering Info

In Stock: 0

MOQ: 3000

Package Quantity: 3000

HTS Code: 8541.21.0095

ECCN: EAR99

COO: MY

*Product Country of Origin (COO) information may be unavailable at the time of order placement. Buyer acknowledges that additional duties, tariffs, or import fees may be assessed based on the actual COO once determined.

Quantity Cost
3000 -

Electrical Characteristics

Collector Current-Max (IC) .05
Collector-base Capacitance-Max 1.6
Collector-emitter Voltage-Max 250
Configuration SINGLE
DC Current Gain-Min (hFE) 50
JESD-30 Code R-PDSO-G3
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 3
Operating Temperature-Max 150
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type NPN
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish Tin (Sn)
Terminal Form GULL WING
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) 40
Transistor Element Material SILICON
Transition Frequency-Nom (fT) 60
VCEsat-Max .6