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BFG35,115 | NXP

NXP BFG35,115

BFG35 Series 18 V 1 W 4 GHz SMT NPN Wideband Transistor - SOT-223


Ordering Info

In Stock: 0

Package Quantity: 1000

COO: CN

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*Product Country of Origin (COO) information may be unavailable at the time of order placement. Buyer acknowledges that additional duties, tariffs, or import fees may be assessed based on the actual COO once determined.

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Electrical Characteristics

Case Connection COLLECTOR
Collector Current-Max (IC) 0.15
Collector-emitter Voltage-Max 18
Configuration SINGLE
DC Current Gain-Min (hFE) 25
Highest Frequency Band ULTRA HIGH FREQUENCY BAND
JESD-30 Code R-PDSO-G4
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 4
Operating Temperature-Max 175
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type NPN
Power Dissipation Ambient-Max 1
Power Dissipation-Max (Abs) 1
Qualification Status Not Qualified
Reference Standard CECC
Sub Category Other Transistors
Surface Mount YES
Terminal Finish Tin (Sn)
Terminal Form GULL WING
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) 40
Transistor Application AMPLIFIER
Transistor Element Material SILICON
Transition Frequency-Nom (fT) 4000