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BFG35,115 | NXP

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NXP BFG35,115

SOT223/NPN BROADB TRANS


Ordering Info

In Stock: 0

Package Quantity: 1000

COO: CN

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Electrical Characteristics

Case Connection COLLECTOR
Collector Current-Max (IC) 0.15
Collector-emitter Voltage-Max 18
Configuration SINGLE
DC Current Gain-Min (hFE) 25
Highest Frequency Band ULTRA HIGH FREQUENCY BAND
JESD-30 Code R-PDSO-G4
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 4
Operating Temperature-Max 175
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type NPN
Power Dissipation Ambient-Max 1
Power Dissipation-Max (Abs) 1
Qualification Status Not Qualified
Reference Standard CECC
Sub Category Other Transistors
Surface Mount YES
Terminal Finish Tin (Sn)
Terminal Form GULL WING
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) 40
Transistor Application AMPLIFIER
Transistor Element Material SILICON
Transition Frequency-Nom (fT) 4000