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BFR31,215 | NXP

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NXP BFR31,215


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Package Quantity: 3000

COO: CN

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Electrical Characteristics

Configuration SINGLE
DS Breakdown Voltage-Min 25
Drain Current-Max (ID) 0.01
FET Technology JUNCTION
Feedback Cap-Max (Crss) 1.5
JESD-30 Code R-PDSO-G3
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 3
Operating Mode DEPLETION MODE
Operating Temperature-Max 150
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 0.3
Qualification Status Not Qualified
Sub Category Other Transistors
Surface Mount YES
Terminal Finish Tin (Sn)
Terminal Form GULL WING
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) 40
Transistor Application AMPLIFIER
Transistor Element Material SILICON