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BFU550XAR | NXP

NXP BFU550XAR

11 GHz 12Vce NPN 18 db 450 mW Wideband Silicon RF Transistor - SC-70


Ordering Info

In Stock: 33000 Delivery

MOQ: 3000

Package Quantity: 3000

HTS Code: 8541.21.00

ECCN: EAR99

COO: CN

Subject to tariff fees.

*Product Country of Origin (COO) information may be unavailable at the time of order placement. Buyer acknowledges that additional duties, tariffs, or import fees may be assessed based on the actual COO once determined.

Quantity Cost
3000-32999 $0.2983
33000+ $0.2754


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Electrical Characteristics

Additional Feature LOW NOISE
Collector Current-Max (IC) 0.05
Collector-emitter Voltage-Max 12
Configuration SINGLE
Highest Frequency Band L BAND
JESD-30 Code R-PDSO-G4
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 4
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type NPN
Reference Standard AEC-Q101; IEC-60134
Surface Mount YES
Terminal Form GULL WING
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application AMPLIFIER
Transistor Element Material SILICON
Transition Frequency-Nom (fT) 11000