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BFU550XAR | NXP

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NXP BFU550XAR

11 GHz 12Vce NPN 18 db 450 mW Wideband Silicon RF Transistor - SC-70


Ordering Info

In Stock: 0

MOQ: 3000

Package Quantity: 3000

HTS Code: 8541.21.00

ECCN: EAR99

COO: CN

Subject to tariff fees.

Quantity Cost
3000 -

Electrical Characteristics

Additional Feature LOW NOISE
Collector Current-Max (IC) 0.05
Collector-emitter Voltage-Max 12
Configuration SINGLE
Highest Frequency Band L BAND
JESD-30 Code R-PDSO-G4
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 4
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type NPN
Reference Standard AEC-Q101; IEC-60134
Surface Mount YES
Terminal Form GULL WING
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application AMPLIFIER
Transistor Element Material SILICON
Transition Frequency-Nom (fT) 11000