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BFU690F,115 | NXP

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NXP BFU690F,115

BFU690F Series NPN 230 mW 5.5 V 100 mA Wideband Silicon RF Transistor-SOT-343F


RoHS Compliant

Ordering Info

In Stock: 0

MOQ: 3000

Package Quantity: 3000

COO: CN

Subject to tariff fees.

Quantity Cost
3000 -

Electrical Characteristics

Additional Feature LOW NOISE
Collector Current-Max (IC) 0.1
Collector-emitter Voltage-Max 5.5
Configuration SINGLE
DC Current Gain-Min (hFE) 90
Highest Frequency Band KA BAND
JESD-30 Code R-PDSO-F4
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 4
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type NPN
Power Dissipation-Max (Abs) 0.23
Sub Category BIP RF Small Signal
Surface Mount YES
Terminal Finish Tin (Sn)
Terminal Form FLAT
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application AMPLIFIER
Transistor Element Material SILICON
Transition Frequency-Nom (fT) 18000