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BFU725F/N1,115 | NXP

NXP BFU725F/N1,115

BFU725 Series 2.8 V 18 dB Gain NPN Silicon Germanium RF Transistor - SOT-343F-4


Ordering Info

In Stock: 0

MOQ: 3000

Package Quantity: 3000

HTS Code: 8541.21.00

ECCN: EAR99

COO: MY

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*Product Country of Origin (COO) information may be unavailable at the time of order placement. Buyer acknowledges that additional duties, tariffs, or import fees may be assessed based on the actual COO once determined.

Quantity Cost
3000 -

Electrical Characteristics

Collector Current-Max (IC) 0.04
DC Current Gain-Min (hFE) 160
Moisture Sensitivity Level 1
Number of Elements 1
Polarity/Channel Type NPN
Power Dissipation-Max (Abs) 0.136
Sub Category BIP RF Small Signal
Surface Mount YES
Transistor Element Material SILICON GERMANIUM