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BFU725F/N1,115 | NXP

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NXP BFU725F/N1,115

SO 4/NPN wideband silicon germanium RF transistor


Ordering Info

In Stock: 0

Package Quantity: 3000

COO: CN

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Electrical Characteristics

Collector Current-Max (IC) 0.04
DC Current Gain-Min (hFE) 160
Moisture Sensitivity Level 1
Number of Elements 1
Polarity/Channel Type NPN
Power Dissipation-Max (Abs) 0.136
Sub Category BIP RF Small Signal
Surface Mount YES
Transistor Element Material SILICON GERMANIUM