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BLT50,115 | NXP SEMICONDUCTOR

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NXP SEMICONDUCTOR BLT50,115

RF Power Bipolar Transistor, 1-Element, Ultra HighFrequency Band, Silicon, NPN


Ordering Info

In Stock: 0

MOQ: 1000

Package Quantity: 1000

Quantity Cost
1000 -

Electrical Characteristics

Additional Feature HIGH RELIABILITY
Case Connection COLLECTOR
Collector Current-Max (IC) .5
Collector-base Capacitance-Max 6
Collector-emitter Voltage-Max 10
Configuration SINGLE
DC Current Gain-Min (hFE) 25
Highest Frequency Band ULTRA HIGH FREQUENCY BAND
JESD-30 Code R-PDSO-G4
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 4
Operating Temperature-Max 175
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type NPN
Power Dissipation Ambient-Max 2
Power Dissipation-Max (Abs) 2
Power Gain-Min (Gp) 10
Qualification Status Not Qualified
Sub Category Other Transistors
Surface Mount YES
Terminal Finish Matte Tin (Sn)
Terminal Form GULL WING
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) 40
Transistor Application AMPLIFIER
Transistor Element Material SILICON