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BSC050N03MSGATMA1 | INFINEON

INFINEON BSC050N03MSGATMA1

Power Field-Effect Transistor, 16AI(D),30V,0.0063ohm, 1-Element,N-Channel,Silicon,Metal-oxide Semiconductor FET


Ordering Info

In Stock: 0

MOQ: 5000

Package Quantity: 5000

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Quantity Cost
5000 -

Electrical Characteristics

Additional Feature AVALANCHE RATED
Avalanche Energy Rating (Eas) 35
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 30
Drain Current-Max (ID) 16
Drain-source On Resistance-Max 0.0063
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PDSO-F5
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 5
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Pulsed Drain Current-Max (IDM) 320
Qualification Status Not Qualified
Surface Mount YES
Terminal Form FLAT
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application SWITCHING
Transistor Element Material SILICON