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BSC082N10LSGATMA1 | INFINEON

INFINEON BSC082N10LSGATMA1

Single N-Channel 100 V 8.2 mOhm 78 nC OptiMOS™ Power Mosfet - TDSON-8


Ordering Info

In Stock: 0

MOQ: 1

Package Quantity: 1

ECCN: EAR99

COO: CN

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*Product Country of Origin (COO) information may be unavailable at the time of order placement. Buyer acknowledges that additional duties, tariffs, or import fees may be assessed based on the actual COO once determined.

Quantity Cost
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Electrical Characteristics

Additional Feature LOGIC LEVEL COMPATIBLE
Avalanche Energy Rating (Eas) 377
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 100
Drain Current-Max (ID) 13.8
Drain-source On Resistance-Max 0.0082
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PDSO-F5
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 5
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Pulsed Drain Current-Max (IDM) 400
Qualification Status Not Qualified
Surface Mount YES
Terminal Form FLAT
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application SWITCHING
Transistor Element Material SILICON