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Ordering Info
In Stock: 0
MOQ: 3000
Package Quantity: 3000
HTS Code: 8541.21.0075
ECCN: EAR99
COO: CN
Subject to tariff fees.
*Product Country of Origin (COO) information may be unavailable at the time of order placement. Buyer acknowledges that additional duties, tariffs, or import fees may be assessed based on the actual COO once determined.
| Quantity | Cost |
|---|---|
| 3000 | - |
Electrical Characteristics
| Additional Feature | AVALANCHE RATED, LOGIC LEVEL COMPATIBLE |
| Configuration | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE |
| DS Breakdown Voltage-Min | 20 |
| Drain Current-Max (ID) | 3.5 |
| Drain-source On Resistance-Max | 0.4 |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| JESD-30 Code | R-PDSO-G6 |
| Moisture Sensitivity Level | 1 |
| Number of Elements | 2 |
| Number of Terminals | 6 |
| Operating Mode | ENHANCEMENT MODE |
| Package Body Material | PLASTIC/EPOXY |
| Package Shape | RECTANGULAR |
| Package Style | SMALL OUTLINE |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Polarity/Channel Type | N-CHANNEL |
| Surface Mount | YES |
| Terminal Form | GULL WING |
| Terminal Position | DUAL |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| Transistor Element Material | SILICON |