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Ordering Info
In Stock: 0
MOQ: 1000
Package Quantity: 1000
HTS Code: 8541.29.00
ECCN: EAR99
COO: CN
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| Quantity | Cost |
|---|---|
| 1000 | - |
Electrical Characteristics
| Additional Feature | AVALANCHE RATED |
| Avalanche Energy Rating (Eas) | 70 |
| Case Connection | DRAIN |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| DS Breakdown Voltage-Min | 60 |
| Drain Current-Max (Abs) (ID) | 1.9 |
| Drain Current-Max (ID) | 1.9 |
| Drain-source On Resistance-Max | 0.3 |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| JESD-30 Code | R-PDSO-G4 |
| JESD-609 Code | e3 |
| Moisture Sensitivity Level | 1 |
| Number of Elements | 1 |
| Number of Terminals | 4 |
| Operating Mode | ENHANCEMENT MODE |
| Operating Temperature-Max | 150 |
| Package Body Material | PLASTIC/EPOXY |
| Package Shape | RECTANGULAR |
| Package Style | SMALL OUTLINE |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Polarity/Channel Type | P-CHANNEL |
| Power Dissipation-Max (Abs) | 1.8 |
| Pulsed Drain Current-Max (IDM) | 7.6 |
| Reference Standard | AEC-Q101 |
| Sub Category | Other Transistors |
| Surface Mount | YES |
| Terminal Finish | Matte Tin (Sn) |
| Terminal Form | GULL WING |
| Terminal Position | DUAL |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| Transistor Element Material | SILICON |