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BSP171PH6327XTSA1 | INFINEON

INFINEON BSP171PH6327XTSA1

Single P-Channel 60 V 0.3 Ohm 20 nC SIPMOS® Power Mosfet - SOT-223


Ordering Info

In Stock: 0

MOQ: 1000

Package Quantity: 1000

HTS Code: 8541.29.0055

ECCN: EAR99

COO: CN

Subject to tariff fees.

*Product Country of Origin (COO) information may be unavailable at the time of order placement. Buyer acknowledges that additional duties, tariffs, or import fees may be assessed based on the actual COO once determined.

Quantity Cost
1000 -

Electrical Characteristics

Additional Feature AVALANCHE RATED, LOGIC LEVEL COMPATIBLE
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 60
Drain Current-Max (Abs) (ID) 1.9
Drain Current-Max (ID) 1.9
Drain-source On Resistance-Max 0.3
FET Technology METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss) 55
JESD-30 Code R-PDSO-G4
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 4
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type P-CHANNEL
Power Dissipation-Max (Abs) 1.8
Reference Standard AEC-Q101
Sub Category Other Transistors
Surface Mount YES
Terminal Finish Matte Tin (Sn)
Terminal Form GULL WING
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Element Material SILICON