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BSP19,115 | NEXPERIA

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NEXPERIA BSP19,115

Power Bipolar Transistor, 1AI(C),350VV(BR)CEO,1-Element, NPN,Silicon,Plastic/Epoxy, 4Pin


Ordering Info

In Stock: 5000 Delivery

MOQ: 1000

Package Quantity: 1000

HTS Code: 8541.29.00

ECCN: EAR99

COO: CN

Subject to tariff fees.

Quantity Cost
1000-4999 $0.2286
5000+ $0.2133


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Electrical Characteristics

Case Connection COLLECTOR
Collector Current-Max (IC) 1
Collector-base Capacitance-Max 2.5
Collector-emitter Voltage-Max 350
Configuration SINGLE
DC Current Gain-Min (hFE) 40
JESD-30 Code R-PDSO-G4
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 4
Operating Temperature-Max 150
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type NPN
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish Tin (Sn)
Terminal Form GULL WING
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application SWITCHING
Transistor Element Material SILICON
Transition Frequency-Nom (fT) 70
VCEsat-Max .5