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BSP19,115 | NEXPERIA

NEXPERIA BSP19,115

Power Bipolar Transistor, 1AI(C),350VV(BR)CEO,1-Element, NPN,Silicon,Plastic/Epoxy, 4Pin


Ordering Info

In Stock: 5000 Delivery

MOQ: 1000

Package Quantity: 1000

HTS Code: 8541.29.00

ECCN: EAR99

COO: CN

Subject to tariff fees.

*Product Country of Origin (COO) information may be unavailable at the time of order placement. Buyer acknowledges that additional duties, tariffs, or import fees may be assessed based on the actual COO once determined.

Quantity Cost
1000-4999 $0.2883
5000+ $0.2662


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Electrical Characteristics

Case Connection COLLECTOR
Collector Current-Max (IC) 1
Collector-base Capacitance-Max 2.5
Collector-emitter Voltage-Max 350
Configuration SINGLE
DC Current Gain-Min (hFE) 40
JESD-30 Code R-PDSO-G4
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 4
Operating Temperature-Max 150
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type NPN
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish Tin (Sn)
Terminal Form GULL WING
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application SWITCHING
Transistor Element Material SILICON
Transition Frequency-Nom (fT) 70
VCEsat-Max .5