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Learn more about ECAD Model here.Electrical Characteristics
Additional Feature | AVALANCHE RATED, LOGIC LEVEL COMPATIBLE |
Avalanche Energy Rating (Eas) | 15 |
Case Connection | DRAIN |
Configuration | SINGLE WITH BUILT-IN DIODE |
DS Breakdown Voltage-Min | 100 |
Drain Current-Max (ID) | 1.2 |
Drain-source On Resistance-Max | 0.6 |
FET Technology | METAL-OXIDE SEMICONDUCTOR |
JESD-30 Code | R-PDSO-G4 |
JESD-609 Code | e3 |
Moisture Sensitivity Level | 1 |
Number of Elements | 1 |
Number of Terminals | 4 |
Operating Mode | ENHANCEMENT MODE |
Package Body Material | PLASTIC/EPOXY |
Package Shape | RECTANGULAR |
Package Style | SMALL OUTLINE |
Peak Reflow Temperature (Cel) | NOT SPECIFIED |
Polarity/Channel Type | N-CHANNEL |
Pulsed Drain Current-Max (IDM) | 4.6 |
Reference Standard | AEC-Q101 |
Surface Mount | YES |
Terminal Finish | Matte Tin (Sn) |
Terminal Form | GULL WING |
Terminal Position | DUAL |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
Transistor Element Material | SILICON |