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BSP52T1G | ON SEMICONDUCTOR

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ON SEMICONDUCTOR BSP52T1G


RoHS Compliant

Ordering Info

In Stock: 3000

MOQ: 1000

Package Quantity: 1000

COO: CN

Subject to tariff fees.

Quantity Cost
1000 -

Electrical Characteristics

Case Connection COLLECTOR
Collector Current-Max (IC) 1
Collector-emitter Voltage-Max 80
Configuration DARLINGTON
DC Current Gain-Min (hFE) 2000
JEDEC-95 Code TO-261AA
JESD-30 Code R-PDSO-G4
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 4
Operating Temperature-Max 150
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type NPN
Power Dissipation-Max (Abs) 1.25
Qualification Status Not Qualified
Sub Category Other Transistors
Surface Mount YES
Terminal Finish Tin (Sn)
Terminal Form GULL WING
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) 40
Transistor Application SWITCHING
Transistor Element Material SILICON