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BSS123LT1G | ON SEMICONDUCTOR/FAIRCHILD

ON SEMICONDUCTOR/FAIRCHILD BSS123LT1G

TRANS MOSFET N-CH 100V


Ordering Info

In Stock: 98944

MOQ: 100

Package Quantity: 0

HTS Code: 8541.21.0095

ECCN: EAR99

Subject to tariff fees.

*Product Country of Origin (COO) information may be unavailable at the time of order placement. Buyer acknowledges that additional duties, tariffs, or import fees may be assessed based on the actual COO once determined.

Quantity Cost
500+ $0.115


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Electrical Characteristics

Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 100
Drain Current-Max (Abs) (ID) 0.17
Drain Current-Max (ID) 0.17
Drain-source On Resistance-Max 6
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-236
JESD-30 Code R-PDSO-G3
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 0.225
Qualification Status Not Qualified
Sub Category FET General Purpose Power
Surface Mount YES
Terminal Finish Tin (Sn)
Terminal Form GULL WING
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) 40
Transistor Application SWITCHING
Transistor Element Material SILICON