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Learn more about ECAD Model here.ON SEMICONDUCTOR BSS123LT1G
SOT23-3/POWER MOSFET 170 MA, 100 V N-CHANNEL SOT-23
Ordering Info
In Stock: 1572000 Delivery
MOQ: 6000
Package Quantity: 3000
COO: CN
Subject to tariff fees.
| Quantity | Cost |
|---|---|
| 6000-1571999 | $0.0443 |
| 1572000+ | $0.0412 |
Secure Payment Methods:
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Electrical Characteristics
| Configuration | SINGLE WITH BUILT-IN DIODE |
| DS Breakdown Voltage-Min | 100 |
| Drain Current-Max (Abs) (ID) | 0.17 |
| Drain Current-Max (ID) | 0.17 |
| Drain-source On Resistance-Max | 6 |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| JEDEC-95 Code | TO-236 |
| JESD-30 Code | R-PDSO-G3 |
| JESD-609 Code | e3 |
| Moisture Sensitivity Level | 1 |
| Number of Elements | 1 |
| Number of Terminals | 3 |
| Operating Mode | ENHANCEMENT MODE |
| Operating Temperature-Max | 150 |
| Package Body Material | PLASTIC/EPOXY |
| Package Shape | RECTANGULAR |
| Package Style | SMALL OUTLINE |
| Peak Reflow Temperature (Cel) | 260 |
| Polarity/Channel Type | N-CHANNEL |
| Power Dissipation-Max (Abs) | 0.225 |
| Qualification Status | Not Qualified |
| Sub Category | FET General Purpose Power |
| Surface Mount | YES |
| Terminal Finish | Tin (Sn) |
| Terminal Form | GULL WING |
| Terminal Position | DUAL |
| Time@Peak Reflow Temperature-Max (s) | 40 |
| Transistor Application | SWITCHING |
| Transistor Element Material | SILICON |