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BSS123LT1G | ON SEMICONDUCTOR

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ON SEMICONDUCTOR BSS123LT1G

SOT23-3/POWER MOSFET 170 MA, 100 V N-CHANNEL SOT-23


Ordering Info

In Stock: 1182000 Delivery

MOQ: 6000

Package Quantity: 3000

COO: CN

Subject to tariff fees.

Quantity Cost
6000-1181999 $0.0479
1182000+ $0.0443


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Electrical Characteristics

Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 100
Drain Current-Max (Abs) (ID) 0.17
Drain Current-Max (ID) 0.17
Drain-source On Resistance-Max 6
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-236
JESD-30 Code R-PDSO-G3
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 0.225
Qualification Status Not Qualified
Sub Category FET General Purpose Power
Surface Mount YES
Terminal Finish Tin (Sn)
Terminal Form GULL WING
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) 40
Transistor Application SWITCHING
Transistor Element Material SILICON