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BSS123W-7-F | DIODES INC.

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DIODES INC. BSS123W-7-F

N-Channel 100 V 10 O Surface Mount Enhancement Mode Mosfet - SOT-323


Ordering Info

In Stock: 357000 Delivery

MOQ: 3000

Package Quantity: 3000

HTS Code: 8541.21.00

ECCN: EAR99

COO: CN

Subject to tariff fees.

Quantity Cost
3000-356999 $0.0526
357000+ $0.0491


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Electrical Characteristics

Additional Feature HIGH RELIABILITY, LOW THRESHOLD
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 100
Drain Current-Max (Abs) (ID) .17
Drain Current-Max (ID) .17
Drain-source On Resistance-Max 10
FET Technology METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss) 6
JESD-30 Code R-PDSO-G3
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) .2
Qualification Status Not Qualified
Sub Category FET General Purpose Powers
Surface Mount YES
Terminal Finish Matte Tin (Sn)
Terminal Form GULL WING
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) 40
Transistor Application SWITCHING
Transistor Element Material SILICON