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BSS138DW-7-F | DIODES INC.

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DIODES INC. BSS138DW-7-F

Dual N-Channel 50 V 3.5 Ohm Surface Mount Enhancement MosFet - SOT-363


Ordering Info

In Stock: 462000 Delivery

MOQ: 3000

Package Quantity: 3000

HTS Code: 8541.21.00

ECCN: EAR99

COO: CN

Subject to tariff fees.

Quantity Cost
3000-461999 $0.0551
462000+ $0.0515


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Electrical Characteristics

Additional Feature HIGH RELIABILITY
Configuration SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 50
Drain Current-Max (Abs) (ID) .2
Drain Current-Max (ID) .2
Drain-source On Resistance-Max 3.5
FET Technology METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss) 8
JESD-30 Code R-PDSO-G6
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 2
Number of Terminals 6
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) .2
Qualification Status Not Qualified
Sub Category FET General Purpose Power
Surface Mount YES
Terminal Finish Matte Tin (Sn)
Terminal Form GULL WING
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) 40
Transistor Application SWITCHING
Transistor Element Material SILICON