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BSS138LT1G | ON SEMICONDUCTOR

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ON SEMICONDUCTOR BSS138LT1G

MOSFET N-CH 50V 200MA SOT23-3


RoHS Compliant

Ordering Info

In Stock: 0

Package Quantity: 0

HTS Code: 8541.21.0095

ECCN: EAR99

Quantity Cost
1000+ $0.159


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Electrical Characteristics

Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 50
Drain Current-Max (Abs) (ID) 0.2
Drain Current-Max (ID) 0.2
Drain-source On Resistance-Max 3.5
FET Technology METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss) 5
JEDEC-95 Code TO-236
JESD-30 Code R-PDSO-G3
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 0.225
Qualification Status Not Qualified
Sub Category FET General Purpose Powers
Surface Mount YES
Terminal Finish Tin (Sn)
Terminal Form GULL WING
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) 40
Transistor Application SWITCHING
Transistor Element Material SILICON