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BSS84AK,215 | NEXPERIA

NEXPERIA BSS84AK,215

BSS84AK Series -50 V 420 mW 0.35 nC P-Channel PowerTrenchMOS FET - SOT-23


Ordering Info

In Stock: 3798000 Delivery

MOQ: 9000

Package Quantity: 3000

HTS Code: 8541.21.00

ECCN: EAR99

COO: CN

Subject to tariff fees.

*Product Country of Origin (COO) information may be unavailable at the time of order placement. Buyer acknowledges that additional duties, tariffs, or import fees may be assessed based on the actual COO once determined.

Quantity Cost
9000-3797999 $0.0268
3798000+ $0.0248


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Electrical Characteristics

Additional Feature LOGIC LEVEL COMPATIBLE
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 50
Drain Current-Max (ID) .18
Drain-source On Resistance-Max 8.5
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-236AB
JESD-30 Code R-PDSO-G3
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type P-CHANNEL
Reference Standard AEC-Q101; IEC-60134
Surface Mount YES
Terminal Finish Tin (Sn)
Terminal Form GULL WING
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING
Transistor Element Material SILICON