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BSS84AKM,315 | NEXPERIA

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NEXPERIA BSS84AKM,315

BSS84AKM Series 50 V 7.5 Ohm 0.26 nC P-Channel TrenchMOS FET - SOT-883


Ordering Info

In Stock: 20000 Delivery

MOQ: 10000

Package Quantity: 10000

HTS Code: 8541.21.00

ECCN: EAR99

COO: CN

Subject to tariff fees.

Quantity Cost
10000-19999 $0.0451
20000+ $0.0421


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Electrical Characteristics

Additional Feature LOGIC LEVEL COMPATIBLE
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 50
Drain Current-Max (ID) 0.23
Drain-source On Resistance-Max 8.5
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PBCC-N3
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style CHIP CARRIER
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type P-CHANNEL
Reference Standard AEC-Q101; IEC-60134
Surface Mount YES
Terminal Finish Tin (Sn)
Terminal Form NO LEAD
Terminal Position BOTTOM
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING
Transistor Element Material SILICON