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Electrical Characteristics
| Additional Feature | LOGIC LEVEL COMPATIBLE |
| Case Connection | DRAIN |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| DS Breakdown Voltage-Min | 50 |
| Drain Current-Max (ID) | 0.23 |
| Drain-source On Resistance-Max | 8.5 |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| JESD-30 Code | R-PBCC-N3 |
| JESD-609 Code | e3 |
| Moisture Sensitivity Level | 1 |
| Number of Elements | 1 |
| Number of Terminals | 3 |
| Operating Mode | ENHANCEMENT MODE |
| Package Body Material | PLASTIC/EPOXY |
| Package Shape | RECTANGULAR |
| Package Style | CHIP CARRIER |
| Peak Reflow Temperature (Cel) | 260 |
| Polarity/Channel Type | P-CHANNEL |
| Reference Standard | AEC-Q101; IEC-60134 |
| Surface Mount | YES |
| Terminal Finish | Tin (Sn) |
| Terminal Form | NO LEAD |
| Terminal Position | BOTTOM |
| Time@Peak Reflow Temperature-Max (s) | 30 |
| Transistor Application | SWITCHING |
| Transistor Element Material | SILICON |