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BSZ042N06NSATMA1 | INFINEON

INFINEON BSZ042N06NSATMA1


Ordering Info

In Stock: 0

On Order Qty: 3

MOQ: 1

Package Quantity: 3

HTS Code: 8541.29.00

ECCN: EAR99

COO: CN

Subject to tariff fees.

*Product Country of Origin (COO) information may be unavailable at the time of order placement. Buyer acknowledges that additional duties, tariffs, or import fees may be assessed based on the actual COO once determined.

Quantity Cost
3+ $0.40


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Electrical Characteristics

Avalanche Energy Rating (Eas) 130
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 60
Drain Current-Max (Abs) (ID) 40
Drain Current-Max (ID) 40
Drain-source On Resistance-Max 0.0042
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code S-PDSO-N3
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150
Package Body Material PLASTIC/EPOXY
Package Shape SQUARE
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 69
Pulsed Drain Current-Max (IDM) 160
Sub Category FET General Purpose Power
Surface Mount YES
Terminal Finish Tin (Sn)
Terminal Form NO LEAD
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application SWITCHING
Transistor Element Material SILICON