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INFINEON BSZ060NE2LSATMA1
Single N-Channel 25 V 6 mOhm 9.1 nC OptiMOS™ Power Mosfet - TSDSON-8
Ordering Info
In Stock: 0
MOQ: 5000
Package Quantity: 5000
ECCN: EAR99
COO: CN
Subject to tariff fees.
*Product Country of Origin (COO) information may be unavailable at the time of order placement. Buyer acknowledges that additional duties, tariffs, or import fees may be assessed based on the actual COO once determined.
| Quantity | Cost |
|---|---|
| 5000 | - |
Electrical Characteristics
| Avalanche Energy Rating (Eas) | 16 |
| Case Connection | DRAIN |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| DS Breakdown Voltage-Min | 25 |
| Drain Current-Max (ID) | 12 |
| Drain-source On Resistance-Max | 0.0081 |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| JESD-30 Code | S-PDSO-N3 |
| Moisture Sensitivity Level | 1 |
| Number of Elements | 1 |
| Number of Terminals | 3 |
| Operating Mode | ENHANCEMENT MODE |
| Package Body Material | PLASTIC/EPOXY |
| Package Shape | SQUARE |
| Package Style | SMALL OUTLINE |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Polarity/Channel Type | N-CHANNEL |
| Pulsed Drain Current-Max (IDM) | 160 |
| Surface Mount | YES |
| Terminal Form | NO LEAD |
| Terminal Position | DUAL |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| Transistor Application | SWITCHING |
| Transistor Element Material | SILICON |