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BSZ100N03MSGATMA1 | INFINEON

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INFINEON BSZ100N03MSGATMA1

Single N-Channel 30 V 9.1 mOhm 17 nC OptiMOS™ Power Mosfet - TSDSON-8


Ordering Info

In Stock: 0

MOQ: 5000

Package Quantity: 5000

Quantity Cost
5000 -

Electrical Characteristics

Avalanche Energy Rating (Eas) 15
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 30
Drain Current-Max (ID) 10
Drain-source On Resistance-Max 0.0114
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code S-PDSO-N5
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 5
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 175
Package Body Material PLASTIC/EPOXY
Package Shape SQUARE
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Pulsed Drain Current-Max (IDM) 160
Qualification Status Not Qualified
Surface Mount YES
Terminal Form NO LEAD
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application SWITCHING
Transistor Element Material SILICON