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BUK9M53-60EX | NEXPERIA

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NEXPERIA BUK9M53-60EX

Power Field-Effect Transistor, 17A I(D),60V,0.053ohm, 1-Element, N-Channel,Silicon,Metal-oxide Semiconductor FET


Ordering Info

In Stock: 3000 Delivery

MOQ: 1500

Package Quantity: 1500

HTS Code: 8541.29.00

ECCN: EAR99

COO: PH

Quantity Cost
1500-2999 $0.2286
3000+ $0.2133


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Electrical Characteristics

Avalanche Energy Rating (Eas) 8.7
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 60
Drain Current-Max (ID) 17
Drain-source On Resistance-Max .053
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PSSO-G4
Number of Elements 1
Number of Terminals 4
Operating Mode ENHANCEMENT MODE
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Polarity/Channel Type N-CHANNEL
Pulsed Drain Current-Max (IDM) 69
Reference Standard AEC-Q101; IEC-60134
Surface Mount YES
Terminal Form GULL WING
Terminal Position SINGLE
Transistor Application SWITCHING
Transistor Element Material SILICON