Request Quote













Request Quote


BUK9M53-60EX | NEXPERIA

NEXPERIA BUK9M53-60EX

Power Field-Effect Transistor, 17A I(D),60V,0.053ohm, 1-Element, N-Channel,Silicon,Metal-oxide Semiconductor FET


Ordering Info

In Stock: 0

MOQ: 1500

Package Quantity: 1500

HTS Code: 8541.29.00

ECCN: EAR99

COO: PH

*Product Country of Origin (COO) information may be unavailable at the time of order placement. Buyer acknowledges that additional duties, tariffs, or import fees may be assessed based on the actual COO once determined.

Quantity Cost
1500 -

Electrical Characteristics

Avalanche Energy Rating (Eas) 8.7
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 60
Drain Current-Max (ID) 17
Drain-source On Resistance-Max .053
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PSSO-G4
Number of Elements 1
Number of Terminals 4
Operating Mode ENHANCEMENT MODE
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Polarity/Channel Type N-CHANNEL
Pulsed Drain Current-Max (IDM) 69
Reference Standard AEC-Q101; IEC-60134
Surface Mount YES
Terminal Form GULL WING
Terminal Position SINGLE
Transistor Application SWITCHING
Transistor Element Material SILICON