Request Quote













Request Quote


BUK9Y153-100E,115 | NEXPERIA

Download the free Library Loader to convert this file for your ECAD Tool.

Learn more about ECAD Model here.

NEXPERIA BUK9Y153-100E,115

Power Field-Effect Transistor, 9.4A I(D),100V,0.153ohm, 1-Element, N-Channel,Silicon,Metal-oxide Semiconductor FET, MO-235


Ordering Info

In Stock: 6000 Delivery

MOQ: 1500

Package Quantity: 1500

HTS Code: 8541.29.00

ECCN: EAR99

COO: CN

Subject to tariff fees.

Quantity Cost
1500-5999 $0.2471
6000+ $0.2307


Secure Payment Methods: Accepted Payment Methods:  Visa, Mastercard, American Express, Discovery Card PayPal accepted
Need more Info?

Electrical Characteristics

Additional Feature AVALANCHE RATED
Avalanche Energy Rating (Eas) 9.5
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 100
Drain Current-Max (ID) 9.4
Drain-source On Resistance-Max .153
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code MO-235
JESD-30 Code R-PSSO-G4
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 4
Operating Mode ENHANCEMENT MODE
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Pulsed Drain Current-Max (IDM) 38
Reference Standard AEC-Q101; IEC-60134
Surface Mount YES
Terminal Finish Tin (Sn)
Terminal Form GULL WING
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING
Transistor Element Material SILICON