Request Quote
![Logging in, please wait...](/Content/Images/loading.gif)
Request Quote
Thank you for your inquiry. We are working on your request and will respond as soon as possible. For immediate inquiries please call 1-866-651-2901
![BUK9Y40-55B,115 | NEXPERIA](/Content/Images/default-part-photo.jpg)
Download the free Library Loader to convert this file for your ECAD Tool.
Learn more about ECAD Model here.Electrical Characteristics
Additional Feature | LOGIC LEVEL COMPATIBLE |
Avalanche Energy Rating (Eas) | 36 |
Case Connection | DRAIN |
Configuration | SINGLE WITH BUILT-IN DIODE |
DS Breakdown Voltage-Min | 55 |
Drain Current-Max (ID) | 26 |
Drain-source On Resistance-Max | .04 |
FET Technology | METAL-OXIDE SEMICONDUCTOR |
JESD-30 Code | R-PSSO-G4 |
JESD-609 Code | e3 |
Moisture Sensitivity Level | 1 |
Number of Elements | 1 |
Number of Terminals | 4 |
Operating Mode | ENHANCEMENT MODE |
Package Body Material | PLASTIC/EPOXY |
Package Shape | RECTANGULAR |
Package Style | SMALL OUTLINE |
Peak Reflow Temperature (Cel) | 260 |
Polarity/Channel Type | N-CHANNEL |
Pulsed Drain Current-Max (IDM) | 106 |
Surface Mount | YES |
Terminal Finish | Tin (Sn) |
Terminal Form | GULL WING |
Terminal Position | SINGLE |
Time@Peak Reflow Temperature-Max (s) | 30 |
Transistor Application | SWITCHING |
Transistor Element Material | SILICON |