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BZB784-C10,115 | NEXPERIA

NEXPERIA BZB784-C10,115

Power Field-Effect Transistor, 55AI(D),55V,0.02ohm,1-Element,N-Channel,Silicon,Metal-oxideSemiconductor FET,TO-252


Ordering Info

In Stock: 0

MOQ: 6000

Package Quantity: 3000

HTS Code: 8541.10.00

ECCN: EAR99

COO: MY

*Product Country of Origin (COO) information may be unavailable at the time of order placement. Buyer acknowledges that additional duties, tariffs, or import fees may be assessed based on the actual COO once determined.

Quantity Cost
6000 -

Electrical Characteristics

Configuration COMMON ANODE, 2 ELEMENTS
Diode Element Material SILICON
Diode Type ZENER DIODE
JESD-30 Code R-PDSO-G3
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 2
Number of Terminals 3
Operating Temperature-Max 150
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity UNIDIRECTIONAL
Power Dissipation-Max .35
Qualification Status Not Qualified
Reference Voltage-Nom 10
Surface Mount YES
Technology ZENER
Terminal Finish Tin (Sn)
Terminal Form GULL WING
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) 40
Voltage Tol-Max 5
Working Test Current 5